DocumentCode
2991081
Title
Dynamic properties of InAs/InP (311)B quantum dot lasers emitting at 1.52 μm
Author
Martinez, A. ; Merghem, K. ; Provost, J.-G. ; Bouchoule, S. ; Martin, F. ; Moreau, G. ; Grillot, F. ; Piron, R. ; Dehaese, O. ; Tavernier, K. ; Loualiche, S. ; Ramdane, A.
Author_Institution
Lab. for Photonic & Nanostruct., CNRS, Marcoussis
fYear
2008
fDate
14-18 Sept. 2008
Firstpage
37
Lastpage
38
Abstract
Microwave frequency properties of truly 3-dimensional confined quantum dot lasers on InP substrate are thoroughly investigated for the first time. A relaxation frequency of 3.7 GHz and a Henry factor of ~7 are measured.
Keywords
III-V semiconductors; indium compounds; quantum dot lasers; Henry factor; InAs-InP; InAs/InP (311)B quantum dot lasers; InP; frequency 3.7 GHz; relaxation frequency; wavelength 1.52 mum; Chirp modulation; Erbium-doped fiber lasers; Gallium arsenide; Indium phosphide; Laser feedback; Laser mode locking; Masers; Molecular beam epitaxial growth; Quantum dot lasers; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location
Sorrento
Print_ISBN
978-1-4244-1782-7
Electronic_ISBN
978-1-4244-1783-4
Type
conf
DOI
10.1109/ISLC.2008.4635997
Filename
4635997
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