• DocumentCode
    2991512
  • Title

    Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers

  • Author

    Sweeney, S.J. ; Hild, K. ; Marko, I.P. ; Yu, S.Q. ; Johnson, S.R. ; Zhang, Y.H.

  • Author_Institution
    Fac. of Eng. & Phys. Sci., Univ. of Surrey, Guildford
  • fYear
    2008
  • fDate
    14-18 Sept. 2008
  • Firstpage
    83
  • Lastpage
    84
  • Abstract
    Under ambient conditions, the temperature sensitivity of 1.3 mum GaAsSb lasers is limited by non-radiative current losses. These are shown to be a critical design consideration for producing temperature insensitive VCSEL operation around room temperature.
  • Keywords
    III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; laser beams; semiconductor lasers; surface emitting lasers; 1.3 mum surface-emitting laser; GaAsSb-GaAs; VCSEL; carrier recombination; edge-emitting laser; laser design; nonradiative current loss; temperature sensitivity; thermal characteristics; wavelength 1.3 mum; Current measurement; Gallium arsenide; Laser theory; Optical materials; Surface emitting lasers; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
  • Conference_Location
    Sorrento
  • Print_ISBN
    978-1-4244-1782-7
  • Electronic_ISBN
    978-1-4244-1783-4
  • Type

    conf

  • DOI
    10.1109/ISLC.2008.4636020
  • Filename
    4636020
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2991512