DocumentCode
2991659
Title
Multi-quantum well emission from blue InGaN-based laser
Author
Schillgalies, M. ; Laubsch, A. ; Sabathil, M. ; Avramescu, Adrian ; Lutgen, S. ; Strauss, U.
fYear
2008
fDate
14-18 Sept. 2008
Firstpage
95
Lastpage
96
Abstract
Electroluminescence measurements of color coded multi-quantum-well structures were used to improve the charge carrier distribution over three quantum wells with emission in the blue spectral region. Laser performance was improved by optimized quantum barrier design.
Keywords
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; laser beams; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; InGaN; blue InGaN-based laser; charge carrier distribution; color coded multiquantum well structure; electroluminescence; multiquantum well emission; quantum barrier design; Charge carrier density; Charge carriers; Current measurement; Electroluminescence; Indium; Pulse measurements; Quantum well devices; Quantum well lasers; Thermal resistance; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location
Sorrento
Print_ISBN
978-1-4244-1782-7
Electronic_ISBN
978-1-4244-1783-4
Type
conf
DOI
10.1109/ISLC.2008.4636026
Filename
4636026
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