Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs

Author

Conrad, N. ; SangHong Shin ; Jiangjiang Gu ; Mengwei Si ; Heng Wu ; Masuduzzaman, Muhammad ; Alam, Md. Ashraful ; Ye, Peide D.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

13

Issue

4

fYear

2013

fDate

Dec. 2013

Firstpage

489

Lastpage

496

Abstract

Furthering Si CMOS scaling requires development of high-mobility channel materials and advanced device structures to improve the electrostatic control. We demonstrate the fabrication of gate-all-around (GAA) indium gallium arsenide (InGaAs) MOSFETs with highly scaled atomic-layer-deposited gate dielectrics. InGaAs, with its high electron mobility, allows higher drive currents and other on-state performance compared to silicon. The GAA structure provides superior electrostatic control of the MOSFET channel with outstanding off-state performance. A subthreshold slope of 72 mV/dec, electron mobility of 764 cm²/V·s, and an on-current of 1.59 mA/μm are demonstrated, for example. Variability studies on on-state and off-state performances caused by the number of nanowire channels are also presented.

Keywords

CMOS integrated circuits; III-V semiconductors; MOSFET; atomic layer deposition; electron mobility; elemental semiconductors; gallium arsenide; indium compounds; nanowires; GAA structure; InGaAs; MOSFET channel; Si; Si CMOS scaling; atomic layer deposition; electron mobility; electrostatic control; gate dielectrics; gate-all-around nanowire; high-mobility channel materials; indium gallium arsenide; nanowire channels; Aluminum oxide; Indium gallium arsenide; Logic gates; MOSFET; Nanoscale devices; Performance evaluation; Gate-all-around; InGaAs; MOSFET; nanowire;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2013.2283854

Filename

6613555