DocumentCode
2992312
Title
Two lumped-charge based power MOSFET models
Author
Subramanian, Yeshwant ; Lauritzen, P.O. ; Green, K.R.
Author_Institution
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
fYear
1998
fDate
1998
Firstpage
1
Lastpage
10
Abstract
This paper presents models for two DMOS devices, the low-voltage lateral diffused MOSFET for IC applications (LDMOS) and the discrete vertical diffused power MOSFET (VDMOS), both developed using the lumped-charge methodology. The LDMOS model gives better performance than the BSIM3 which is the industry-standard model for the lateral diffused MOSFET. The VDMOS model is an improved version of the Budihardjo-Lauritzen model
Keywords
power MOSFET; semiconductor device models; DMOS devices; IC applications; LDMOS; VDMOS; discrete vertical diffused power MOSFET; improved Budihardjo-Lauritzen model; low-voltage lateral diffused MOSFET; lumped-charge based power MOSFET models; Application specific integrated circuits; Equations; Integrated circuit modeling; MOSFET circuits; Power MOSFET; Power system modeling; Semiconductor device modeling; Semiconductor devices; USA Councils; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computers in Power Electronics, 1998. 6th Workshop on
Conference_Location
Cernobbio
ISSN
1093-5142
Print_ISBN
0-7803-4856-7
Type
conf
DOI
10.1109/CIPE.1998.779651
Filename
779651
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