• DocumentCode
    2993370
  • Title

    Studies on Failure Mechanism of ET High Via Resistance in Wafer Fabrication

  • Author

    Younan, Hua ; Khim, Tan Sock ; Kun, Li ; Siping, Zhao

  • Author_Institution
    Chartered Semicond. Manuf. Ltd., Singapore
  • fYear
    2006
  • fDate
    Oct. 29 2006-Dec. 1 2006
  • Firstpage
    884
  • Lastpage
    886
  • Abstract
    In this paper, an ET high via resistance case was investigated. TEM/EDX technique was used for identification of the root cause. Failure mechanism of Al fluoride defects is discussed. Some preventive actions/solutions were implemented to improve the process margin and eliminate the problem.
  • Keywords
    X-ray chemical analysis; aluminium compounds; failure analysis; integrated circuit interconnections; integrated circuit reliability; transmission electron microscopy; EDX; ET high via resistance; TEM; aluminium fluoride defects; failure mechanism; metal interconnect; wafer fabrication; Chemicals; Contamination; Electrons; Fabrication; Failure analysis; Filters; Image analysis; Image color analysis; Textile industry; Wood industry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    0-7803-9730-4
  • Electronic_ISBN
    0-7803-9731-2
  • Type

    conf

  • DOI
    10.1109/SMELEC.2006.380765
  • Filename
    4266748
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2993370