Temperature performance of 1.55 μm vertical cavity lasers with integrated InP/GaInAsP Bragg reflector

Author

Rapp, S. ; Piprek, J. ; Streubel, K. ; André, J. ; Messmer, E. Rodriguez ; Wallin, J.

Author_Institution

Dept. of Electron., R. Inst. of Technol., Kista, Sweden

fYear

1997

fDate

11-15 May 1997

Firstpage

36

Lastpage

39

Abstract

Long wavelength vertical cavity lasers (VCL) have gained considerable interest after the first continuous wave (CW) room temperature (RT) operating devices were fabricated. As a potential light source for future optical communication systems, they offer a number of advantages such as array fabrication, on-chip-testability, cost effective fabrication, and effective fiber coupling. We fabricated 1.55 μm laser diodes based on an integrated GaInAsP/InP mirror. Here we focus on the temperature sensitivity, especially of the threshold current as a function of the gain offset (cavity tuning)

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser cavity resonators; laser mirrors; laser tuning; quantum well lasers; 1.55 mum; GaInAsP quantum wells; InP-GaInAsP; MQW structure; array fabrication; cavity tuning; continuous wave room temperature operation; cost effective fabrication; effective fiber coupling; gain offset; integrated InP/GaInAsP Bragg reflector; laser diodes; long wavelength vertical cavity lasers; on-chip-testability; temperature performance; temperature sensitivity; threshold current; vertical cavity lasers; Costs; Diode lasers; Fiber lasers; Light sources; Optical arrays; Optical coupling; Optical device fabrication; Optical fiber communication; Optical fiber devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600022

Filename

600022