DocumentCode
2993716
Title
Studies on A New Sela-FIB Sample Preparation Method and Its Application in Failure Analysis of Wafer Fabrication for 110nm Technology Node and Beyond
Author
Siping, Zhao ; Younan, Hua ; Eddie, Er ; Hong, Khoo Ley
Author_Institution
Chartered Semicond. Mfg Ltd., Singapore
fYear
2006
fDate
Oct. 29 2006-Dec. 1 2006
Firstpage
977
Lastpage
980
Abstract
In this paper, a novel sample preparation method for obtaining high- resolution SEM profile is proposed. Both Sela fine cleave and FIB slice techniques have been used for SEM sample preparation. Using this new method, high-resolution 90 degrees SEM micrographs are provided. It has been applied in failure analysis to check Via gouging information without any charging problem, which helps us to reduce TEM analysis samples.
Keywords
failure analysis; focused ion beam technology; nanotechnology; scanning electron microscopy; specimen preparation; FIB slice techniques; Sela fine cleave techniques; failure analysis; high- resolution SEM profile; nanotechnology; sample preparation method; size 110 nm; wafer fabrication; Erbium; Fabrication; Failure analysis; Focusing; Information analysis; Inspection; Ion beams; Milling; Textile industry; Wood industry;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
0-7803-9730-4
Electronic_ISBN
0-7803-9731-2
Type
conf
DOI
10.1109/SMELEC.2006.380784
Filename
4266767
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