Investigation on the Optical Properties of N-Doped Zn0.925Mg0.075O Thin Films

Author

Wang, Weina ; Fang, Qingqing ; Liu, Yanmei ; Zhang, Hanming ; Zhang, Qiping

Author_Institution

Sch. of Phys. & Mater. Sci., Anhui Univ., Hefei, China

fYear

2012

fDate

21-23 May 2012

Firstpage

1

Lastpage

4

Abstract

Nitrogen doped Zn_0.925Mg_0.075O (ZMO) films were grown on Si substrate by pulsed laser deposition (PLD). The influence of nitrogen on the optical properties and the structure of ZMO films have been studied by photoluminescence (PL), Raman spectra and X-ray diffraction (XRD). The results indicate that the emission spectra separated obviously two light regions of an ultraviolet (UV) and a visible light with the increase of N₂ pressure. For a low nitrogen sample (N:ZMO-5Pa), the result of a vibrational mode associated with Zn_i-N_O complex has been obtained as combining PL with Raman spectra, indicating nitrogen substituting to oxygen and implanting into crystal site of ZnO.

Keywords

II-VI semiconductors; Raman spectra; X-ray diffraction; ion implantation; nitrogen; photoluminescence; pulsed laser deposition; semiconductor doping; semiconductor growth; semiconductor thin films; ultraviolet spectra; vibrational modes; visible spectra; wide band gap semiconductors; zinc compounds; N-doped thin films; Raman spectra; Si; Si substrate; X-ray diffraction; XRD; Zn_0.925Mg_0.075O:N; crystal site implantation; emission spectra; optical properties; photoluminescence; pulsed laser deposition; ultraviolet-visible light spectra; vibrational mode; Educational institutions; Nitrogen; Optical films; Physics; Temperature measurement; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronics (SOPO), 2012 Symposium on

Conference_Location

Shanghai

ISSN

2156-8464

Print_ISBN

978-1-4577-0909-8

Type

conf

DOI

10.1109/SOPO.2012.6270517

Filename

6270517