DocumentCode
2994747
Title
Wide temperature range compact modeling of SiGe HBTs for space applications
Author
Luo, Lan ; Xu, Ziyan ; Niu, Guofu ; Chakraborty, Partha S. ; Cheng, Peng ; Thomas, Dylan ; Moen, Kurt ; Cressler, John D. ; Mudholkar, Mihir ; Mantooth, H. Alan
Author_Institution
ECE Dept., Auburn Univ., Auburn, AL, USA
fYear
2011
fDate
14-16 March 2011
Firstpage
110
Lastpage
113
Abstract
We present here wide temperature range compact modeling of Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) based on Most EXquisite TRAnsistor Model (Mextram). Various modifications and extensions are made to enable modeling of DC characteristics from 43-393 K, and AC characteristics from 93-393 K.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; Mextram; SiGe; SiGe HBT; Silicon-Germanium heterojunction bipolar transistors; most exquisite transistor model; space applications; wide temperature range compact modeling; Current measurement; Integrated circuit modeling; Mathematical model; Resistance; Temperature distribution; Temperature measurement; Mextram; SiGe HBT; compact model; cryogenic temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
System Theory (SSST), 2011 IEEE 43rd Southeastern Symposium on
Conference_Location
Auburn, AL
ISSN
0094-2898
Print_ISBN
978-1-4244-9594-8
Type
conf
DOI
10.1109/SSST.2011.5753786
Filename
5753786
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