DocumentCode
2994823
Title
An Ultra Low Power ESD Protected Mixer in 90nm RF CMOS
Author
Salmeh, Roghoyeh
Author_Institution
Univ. of Calgary, Calgary
Volume
1
fYear
2006
fDate
6-9 Aug. 2006
Firstpage
47
Lastpage
50
Abstract
Behavioral analysis of a low voltage/low power mixer in 90 nm CMOS technology is demonstrated. The down conversion mixer achieves a measured conversion gain of 2.55 dB and input 1 dB compression point of- 6.5 dBm. The mixer draws only 0.24 mA from a 1.2 V supply. A wide band output IF of 500 kHz up to 100 MHz was also achieved.
Keywords
CMOS integrated circuits; UHF integrated circuits; UHF mixers; electrostatic discharge; integrated circuit layout; integrated circuit testing; low-power electronics; nanoelectronics; RF CMOS technology; conversion gain; current 0.24 mA; down conversion mixer; gain 2.55 dB; layout design; size 90 nm; ultra low power ESD protected mixer; voltage 1.2 V; CMOS technology; Circuits; Electrostatic discharge; Energy consumption; Linearity; Low voltage; Noise figure; Personal digital assistants; Protection; Radio frequency; 90nm; Low power; Low voltage; RF CMOS; down conversion mixer;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2006. MWSCAS '06. 49th IEEE International Midwest Symposium on
Conference_Location
San Juan
ISSN
1548-3746
Print_ISBN
1-4244-0172-0
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2006.381991
Filename
4267068
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