DocumentCode
2995496
Title
Ka-band low loss and high power handling GaAs PIN diode MMIC phase shifter for reflected-type phased array systems
Author
Takasu, H. ; Sadaki, F. ; Kawano, M. ; Kamihashi, S.
Author_Institution
Solid-State Eng. Dept., Toshiba Corp., Kawasaki, Japan
Volume
2
fYear
1999
fDate
13-19 June 1999
Firstpage
467
Abstract
This paper describes the design and performances of a GaAs PIN diode and a reflected-type MMIC phase shifter in Ka-band. With optimized geometries and fabrication process, the GaAs PIN diode has shown the highest fmax so far. Excellent performances of MMIC phase shifters have also been obtained.
Keywords
III-V semiconductors; MIMIC; MMIC phase shifters; antenna phased arrays; gallium arsenide; millimetre wave antenna arrays; millimetre wave phase shifters; p-i-n diodes; III-V semiconductors; Ka-band; MMIC phase shifter; PIN diode; fabrication process; optimized geometries; power handling; reflected-type phased array systems; Electrodes; Equivalent circuits; Fabrication; Gallium arsenide; Geometry; MMICs; Millimeter wave technology; Phase shifters; Phased arrays; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779803
Filename
779803
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