DocumentCode
2997042
Title
Statistical model for ring oscillator phase noise variability accounting for within-die process variation
Author
Khalek, Faizal ; Mostafa, Hassan ; Anis, Mohab
Author_Institution
Multimedia Univ., Cyberjaya, Malaysia
fYear
2009
fDate
15-16 July 2009
Firstpage
118
Lastpage
121
Abstract
Phase noise is one of the most restricted specifications in oscillators, especially ring oscillators. Phase noise will exhibit large fluctuations around its nominal value due to the increased process variation with technology scaling. These fluctuations will cause some fabricated ring oscillators not to meet the phase noise constraint and, hence, result in yield loss. This yield loss is expected to become worse especially for sub-90-nm technology nodes. In this paper, an analytical model for the phase noise variability in ring oscillators is proposed. The proposed model has been verified using Monte Carlo SPICE simulations for an industrial 65-nm CMOS technology and is found in good agreement. The model shows that for the commonly used differential-pair-based ring oscillators, the main contribution in phase noise variability comes from the differential pair tail transistor. It also shows that the phase noise variability is reduced as the supply voltage increases. These results can be used to mitigate the phase noise variability and improve the yield through proper sizing of the tail transistor or higher supply voltage.
Keywords
CMOS integrated circuits; Monte Carlo methods; SPICE; microassembling; oscillators; phase noise; statistical analysis; CMOS technology; Monte Carlo SPICE simulations; die process; differential pair tail transistor; phase noise variability; ring oscillator; size 65 nm; statistical model; supply voltage; Analytical models; CMOS technology; Fluctuations; Monte Carlo methods; Phase noise; Ring oscillators; SPICE; Semiconductor device modeling; Tail; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-4952-1
Electronic_ISBN
978-1-4244-4952-1
Type
conf
DOI
10.1109/ASQED.2009.5206286
Filename
5206286
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