Off-state gate leakage current in N-channel MOSFETs with gate dielectrics prepared by different techniques

Author

Xu, Zeng ; Lai, P.T. ; Ng, W.T.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong

fYear

1995

fDate

34881

Firstpage

19

Lastpage

22

Abstract

Off-state gate current of n-channel MOSFETs with OX, RONO, N20N, and N20G oxides as gate dielectrics was investigated in this work. It is revealed that gate current conduction mechanism in the low field region is very different for these oxides. Enhanced conductivity is observed in RONO and N20G oxides, which is attributed to the trap-assisted tunneling mechanism. Therefore, in view of gate leakage, the method of nitridizing pre-grown thermal oxide is more feasible than directly growing oxide in N₂O ambient, especially in leakage sensitive applications, such as very-low-power battery-based circuits, DRAM cells, etc

Keywords

MOSFET; dielectric thin films; leakage currents; semiconductor device reliability; tunnelling; DRAM cells; N-channel MOSFET; N20G oxides; N20N oxides; N₂O; OX oxides; RONO oxides; battery-based circuits; gate current conduction mechanism; gate dielectrics; leakage sensitive applications; off-state gate leakage current; reoxidized NH₃-nitrided oxide; thermal oxide; trap-assisted tunneling mechanism; Degradation; Dielectric measurements; Electrons; Hot carriers; Implants; Leakage current; MOS devices; MOSFET circuits; Nonvolatile memory; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995., Proceedings 1995 IEEE Hong Kong

Print_ISBN

0-7803-2919-8

Type

conf

DOI

10.1109/HKEDM.1995.520637

Filename

520637