DocumentCode
2999084
Title
Effect of contact thickness on electrical properties of Organic Thin Film Transistors
Author
Saxena, Shanky ; Kumar, Bijendra ; Kaushik, B.K. ; Negi, Yuvraj Singh
Author_Institution
Jaypee Inst. of Inf. Technol. (JIIT), Noida, India
fYear
2013
fDate
12-14 Dec. 2013
Firstpage
387
Lastpage
391
Abstract
This research paper analyses the electrical performance of various structures of Organic Thin Film Transistors (OTFTs) based upon their current-voltage characteristics and performance parameters. Further, the effect of variation of electrode thickness on drain current and electrical parameters has been investigated. Electrode thickness is varied from 0 nm to 40 nm in the steps of 10 nm for staggered and planar structures while other structural dimensions and properties are same for both the structures. The performance parameters of OTFTs are estimated at different values of electrode thickness by way of two-dimensional drift-diffusion simulations. Observed results indicate that planar structures are more affected by variation in electrode thickness. The mobility and current on-off ratio of planar structure are found to be lower than that of staggered structure. This analysis simplifies number of issues related to design and fabrication of organic devices and circuits.
Keywords
carrier mobility; organic field effect transistors; organic semiconductors; thin film transistors; OTFT; contact thickness; current on-off ratio; current-voltage characteristics; drain current; electrical parameters; electrode thickness; mobility; organic thin film transistors; performance parameters; planar structure; staggered structure; two-dimensional drift-diffusion simulations; Electrodes; Logic gates; Organic thin film transistors; Pentacene; Current on-off ratio; mobility; organic semiconductor; organic thin film transistor; planar structure; staggered structure; threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Signal Processing and Communication (ICSC), 2013 International Conference on
Conference_Location
Noida
Print_ISBN
978-1-4799-1605-4
Type
conf
DOI
10.1109/ICSPCom.2013.6719818
Filename
6719818
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