3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-k dielectric on 1P6M-0.18 μm-CMOS

For the first time, we demonstrate 3D integration of self-aligned IrO₂(Hf)/LaAlO₃/GOI CMOSFETs above 0.18 μm Si CMOSFETs. At EOT=1.4nm, the novel IrO₂(Hf) dual gates (4.4 and 5.1 eV workfunction) on control 2D LaAlO₃/Si devices have high electron and hole mobilities of 203 and 67 cm²/Vs. On the 3D structure the LaAlO₃/ GOI shows even higher 389 and 234 cm²/Vs mobilities, and process compatibility with current Si VLSI. The higher drive current, larger integration density, shorter interconnects distance, and simple process of 3D approach can help solve the AC power issue and 2D scaling limitation.