Growth behavior of epitaxial semiconductor axial nanowire heterostructures

Author

Zou, J. ; Paladugu, M. ; Guo, Y.N. ; Zhang, X. ; Auchterlonie, G.J. ; Joyce, H.J. ; Gao, Q. ; Tan, H.H. ; Jagadish, C. ; Kim, Y.

Author_Institution

Sch. of Eng., Univ. of Queensland, St Lucia, QLD

fYear

2008

fDate

July 28 2008-Aug. 1 2008

Firstpage

71

Lastpage

74

Abstract

In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation by axial growth of GaSb on GaAs nanowires.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; nanowires; semiconductor growth; wide band gap semiconductors; GaAs; InAs; axial growth; epitaxial semiconductor axial nanowire heterostructures; growth behavior; lateral misfit strain relaxation; vapor-liquid-solid mechanism; Capacitive sensors; Chemicals; Diffraction; Electron microscopy; Epitaxial growth; Gallium arsenide; Image segmentation; Lattices; Physics; Transmission electron microscopy; Crystal Growth; epitaxy; heterostructues; nanowires; nucleation and growth; vapor-liquid-solid;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on

Conference_Location

Sydney, SA

ISSN

1097-2137

Print_ISBN

978-1-4244-2716-1

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2008.4802094

Filename

4802094