• DocumentCode
    3000889
  • Title

    Inversion mobility and gate leakage in high-k/metal gate MOSFETs

  • Author

    Kotlyar, R. ; Giles, M.D. ; Matagne, P. ; Obradovic, B. ; Shifren, L. ; Stettler, M. ; Wang, E.

  • Author_Institution
    Technol. CAD, Intel Corp., Hillsboro, OR, USA
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    391
  • Lastpage
    394
  • Abstract
    For the first time, we show with simulation that the use of a metal gate/high-k stack offers improved mobility over polysilicon/high-k gates stacks while maintaining decreased gate leakage compared to conventional SiO2 stacks, thus allowing high-performance transistor scaling to continue.
  • Keywords
    MOSFET; electron mobility; leakage currents; SiO2 stacks; gate leakage; high-k/metal gate MOSFETs; high-performance transistor; inversion mobility; polysilicon/high-k gates stacks; Dielectric substrates; Electrons; Frequency; Gate leakage; High K dielectric materials; High-K gate dielectrics; MOSFETs; Phonons; Plasma density; Polarization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419167
  • Filename
    1419167
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3000889