Modeling of retention time distribution of DRAM cell using a Monte-Carlo method

Author

Jin, Seonghoon ; Yi, Jeong-Hyong ; Park, Young June ; Min, Hong Shick ; Choi, Jae Hoon ; Kang, Dae Gwan

Author_Institution

Sch. of Electr. Eng. & Nano-Syst. Inst., Seoul Nat. Univ., South Korea

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

399

Lastpage

402

Abstract

A comprehensive Monte-Carlo method for the simulation of the data retention time distribution of DRAM cell has been developed using the current Green´s function in the calculation of leakage current. The Monte-Carlo simulation results including the trap-assisted tunneling and the stress-induced bandgap narrowing models show that our model can explain the effects of the wide range of the bias, doping, and mechanical stress on the retention time distribution for both the main and tail parts of the cells.

Keywords

DRAM chips; Green´s function methods; Monte Carlo methods; circuit simulation; leakage currents; tunnelling; DRAM cell; Green function; Monte-Carlo method; bias effects; doping effects; leakage current; mechanical stress; retention time distribution; stress-induced bandgap narrowing; trap-assisted tunneling; Charge carrier processes; Energy states; Green´s function methods; Leakage current; Photonic band gap; Random access memory; Semiconductor process modeling; Stress; Tail; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419169

Filename

1419169