DocumentCode
3002153
Title
Ultra high-speed 0.25-μm emitter InP-InGaAs SHBTs with fmax of 687 GHz
Author
Yu, Daekyu ; Choi, Kwangsik ; Lee, Kyungho ; Kim, Bumman ; Zhu, H. ; Vargason, K. ; Kuo, J.-M. ; Pinsukanjana, P. ; Kao, Y.C.
Author_Institution
Dept. of Electr. & Electron. Eng., Pohang Univ. of Sci. & Technol., South Korea
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
557
Lastpage
560
Abstract
We have developed novel but simple process techniques for high speed InP SHBTs. For parasitic reduction, the collector layer is undercut using an etch-stop layer, the base pad is isolated, and the emitter metal is widened using thick plated gold. For transit time reduction, the SHBT employs InGaAs base with graded In-composition and InGaAlAs emitter setback with graded Al-composition. Maximum extrapolated fmax of about 687 GHz with fT of 215 GHz is achieved for 0.25 × 8 μm2 emitter area devices at Ic = 8 mA and Vce = 15 V. This data clearly shows that the optimized conventional process can offer direct implementation of InP HBT for high-speed electronic circuit fabrication.
Keywords
III-V semiconductors; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated circuit layout; submillimetre wave integrated circuits; 0.25 micron; 15 V; 687 GHz; 8 mA; InP-InGaAs; electronic circuit fabrication; emitter metal; etch-stop layer; high speed InP SHBT; parasitic reduction; thick plated gold; transit time reduction; Contact resistance; Cutoff frequency; Double heterojunction bipolar transistors; Etching; Fabrication; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Parasitic capacitance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419219
Filename
1419219
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