Sub 30 nm multi-bridge-channel MOSFET (MBCFET) with metal gate electrode for ultra high performance application

Author

Yoon, Eun-Jung ; Lee, Sung-Young ; Kim, Sung-Min ; Kim, Min-Sang ; Kim, Sung Hwan ; Ming, Li ; Suk, Sungdae ; Yeo, Kyounghawn ; Oh, Chang Woo ; Choe, Jung-Dong ; Choi, Donguk ; Kim, Dong-Won ; Park, Donggun ; Kim, Kinam ; Ryu, Byung-II

Author_Institution

Semicond. R&D Center, Samsung Electron., Yongin, South Korea

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

627

Lastpage

630

Abstract

We have successfully fabricated sub 30nm N+ poly and TiN gate MBCFET (multi-bridge-channel field effect transistor) both on SOI wafers and bulk-Si wafers. Using TiN metal gate and 20nm multi bridge channels, we achieved the drive current of 2.3mA/μm that is the largest drive current ever reported for pMOSFETs with excellent subthreshold swing of 75mV/dec, and drain induce barrier lowering (DIBL) of 36mV/V. Large I_on/I_off ratio and excellent threshold voltage (V_t) distribution were obtained using TiN metal gate to eliminate channel ion implantation minimizing the mobility degradation and dopant fluctuation.

Keywords

MOSFET; carrier mobility; ion implantation; nanoelectronics; silicon-on-insulator; titanium compounds; 20 nm; N+ poly MBCFET; SOI wafers; Si; TiN; TiN gate MBCFET; TiN metal gate; bulk-Si wafers; channel ion implantation; dopant fluctuation; drain induce barrier lowering; drive current; metal gate electrode; mobility degradation; multibridge-channel MOSFET; multibridge-channel field effect transistor; pMOSFET; threshold voltage distribution; ultra high performance application; Bridge circuits; Degradation; Drives; Electrodes; FETs; Fluctuations; Ion implantation; MOSFET circuits; Threshold voltage; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419244

Filename

1419244