A novel multi-channel field effect transistor (McFET) on bulk Si for high performance sub-80nm application

Author

Kim, Sung Min ; Yoon, Eun Jung ; Jo, Hye Jin ; Li, Ming ; Oh, Chang Woo ; Lee, Sung Young ; Yeo, Kyoung Hwan ; Kim, Min Sang ; Kim, Sung Hwan ; Choe, Dong Uk ; Choe, Jeong Dong ; Suk, Sung Dae ; Kim, Dong-Won ; Park, Donggun ; Kim, Kinam ; Ryu, Byung-Il

Author_Institution

Semicond. R&D Center, Samsung Electron., Yongin, South Korea

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

639

Lastpage

642

Abstract

We demonstrate highly manufacturable double FinFET on bulk Si wafer, named multi-channel field effect transistor (McFET) for the high performance 80nm 144M SRAM. Twin fins are formed for each transistor using our newly developed simple process scheme. McFET with L_G=80nm shows several excellent transistor characteristics, such as ∼5 times higher drive current than planar MOSFET, ideal subthreshold swing of 60mV/dec, drain induced barrier lowering (DIBL) of 15mV/V without pocket implantation, and negligible body bias dependency, maintaining the same source/drain resistance as planar transistor due to the unique feature of McFET.

Keywords

SRAM chips; elemental semiconductors; field effect transistors; nanoelectronics; silicon; 144M SRAM; 80 nm; Si; bulk Si wafer; double FinFET; drain induced barrier lowering; drain resistance; drive current; ideal subthreshold swing; multichannel field effect transistor; negligible body bias dependency; planar MOSFET; planar transistor; source resistance; Electrodes; Etching; FETs; Fabrication; FinFETs; Immune system; MOSFET circuits; Manufacturing processes; Research and development; Semiconductor device manufacture;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419247

Filename

1419247