Measurement of high current density phenomena and velocity overshoot in InP/GaInAs HBTs

Author

Betser, Y. ; Ritter, D.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

fYear

1997

fDate

11-15 May 1997

Firstpage

149

Lastpage

152

Abstract

Electron transport in the collector of InP/GaInAs heterojunction bipolar transistors (HBTs) was experimentally studied in the high current density regime. The average velocity of electrons in the collector was obtained as a function of the collector current density and base collector voltage, and found to be larger than the saturation velocity. Phenomena caused by the base push out (Kirk) effect were observed. It is demonstrated that below the onset of the Kirk effect the injected electron space charge in the collector improved the high frequency performance of the HBT. A new result presented is that the average electron velocity in the collector exhibited a maximum when plotted versus the base collector voltage

Keywords

III-V semiconductors; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; space charge; InP-InGaAs; InP/GaInAs HBT; Kirk effect; base push out; collector current density; electron transport; heterojunction bipolar transistor; high frequency performance; injected space charge; saturation velocity; velocity overshoot; Current density; Current measurement; Density measurement; Electrons; Heterojunction bipolar transistors; Indium phosphide; Kirk field collapse effect; Space charge; Velocity measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600076

Filename

600076