• DocumentCode
    3003400
  • Title

    Model for dielectric breakdown mechanism of HfAlOx/SiO2 stacked gate dielectrics dominated by the generated subordinate carrier injection

  • Author

    Okada, Kenji ; Mizubayashi, Wataru ; Yasuda, Naoki ; Satake, Hideki ; Ota, Hiroyuki ; Kadoshima, Masaru ; Tominaga, Koji ; Ogawa, Anto ; Iwamoto, Kunihiko ; Horikawa, Tsuyoshi ; Nabatame, Toshihide ; Toriumi, Akira

  • Author_Institution
    MIRAI-ASET, Ibaraki, Japan
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    721
  • Lastpage
    724
  • Abstract
    The dielectric breakdown mechanism of HfAlOx/SiO2 stacked gate dielectrics has been studied. Under the positive gate stress, validity of the anode hole injection model has been experimentally confirmed for the first time, while the cathode electron injection model is valid under the negative gate stress. Consolidating these mechanisms, the generated subordinate carrier injection (GSCI) model has been proposed for gate dielectrics including the conventional SiO2.
  • Keywords
    dielectric thin films; electric breakdown; hafnium compounds; insulating thin films; silicon compounds; HfAlO-SiO2; anode hole injection model; cathode electron injection model; dielectric breakdown mechanism; gate stress; generated subordinate carrier injection; stacked gate dielectrics; Cathodes; Charge carrier processes; Dielectric breakdown; Dielectric measurements; Electron traps; High K dielectric materials; High-K gate dielectrics; Solids; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419272
  • Filename
    1419272
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3003400