Modeling of RTS noise in MOSFETs under steady-state and large-signal excitation

Author

Kolhatkar, J.S. ; Hoekstra, E. ; Salm, C. ; van der Wel, A.P. ; Klumperink, E.A.M. ; Schmitz, J. ; Wallinga, H.

Author_Institution

Twente Univ., Enschede, Netherlands

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

759

Lastpage

762

Abstract

The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our measurements show a significant transient effect, in line with earlier reports. We present a new physical model to describe this transient behavior and to predict RTS noise in MOSFETs under large-signal excitation. With only three model parameters the behavior is well described, contrary to existing models.

Keywords

MOSFET; semiconductor device models; semiconductor device noise; MOSFET; RTS noise; large-signal excitation; low-frequency noise; random telegraph signals; semiconductor device models; steady-state excitation; transient effect; Circuit noise; Circuit simulation; Low-frequency noise; MOSFETs; Predictive models; Radio frequency; Semiconductor device modeling; Steady-state; Telegraphy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419283

Filename

1419283

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3003618