A 100-W high-gain AlGaN/GaN HEMT power amplifier on a conductive n-SiC substrate for wireless base station applications

Author

Kanamura, M. ; Kikkawa, T. ; Joshin, K.

Author_Institution

Fujitsu Labs. Ltd., Kanagawa, Japan

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

799

Lastpage

802

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on a low-cost conductive n-SiC substrate. A single-chip GaN HEMT amplifier, operating at 60 V, achieved high CW output power of (101 W), a high linear gain (155 dB) and 50 % power-added efficiency at 2.14 GHz. This is the first report about the greater than 100 W power performance of the single-chip GaN HEMT that was grown on a conductive substrate.

Keywords

III-V semiconductors; UHF power amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; 100 W; 155 dB; 2.14 GHz; 60 V; AlGaN-GaN; CW output power; conductive n-SiC substrate; conductive substrate; high electron mobility transistors; high-gain HEMT; linear gain; power amplifier; power-added efficiency; single-chip GaN HEMT amplifier; wireless base station applications; Aluminum gallium nitride; Base stations; Gallium nitride; HEMTs; High power amplifiers; Insulation; Power generation; Silicon carbide; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419296

Filename

1419296