DocumentCode
3004403
Title
Ultrafast Pump-probe Experiment Based on Extremely Broadband Second-harmonic Generation
Author
Lu, Yen-Cheng ; Wang, Hsiang-Chen ; Chen, Cheng-Yen ; Yang, C.C.
Author_Institution
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We use a non-degenerate pump-probe scheme of an extremely broad probe spectrum to monitor the ultrafast carrier relaxation process from the excitation levels down to the free-carrier and the localized states in an InGaN thin-film.
Keywords
III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; localised states; optical harmonic generation; optical pumping; semiconductor thin films; InGaN; broad probe spectrum; excitation levels; extremely broadband second-harmonic generation; free-carrier; localized states; nondegenerate pump-probe scheme; ultrafast carrier relaxation process; ultrafast pump-probe experiment; Delay effects; Dispersion; Energy states; Fluctuations; Gallium nitride; Indium; Optical films; Probes; Transistors; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452566
Filename
4452566
Link To Document