Highly manufacturable high density phase change memory of 64Mb and beyond

Author

Ahn, S.J. ; Song, Y.J. ; Jeong, C.W. ; Shin, J.M. ; Fai, Y. ; Hwang, Y.N. ; Lee, S.H. ; Ryoo, K.C. ; Lee, S.Y. ; Park, J.H. ; Horii, H. ; Ha, Y.H. ; Yi, J.H. ; Kuh, B.J. ; Koh, G.H. ; Jeong, G.T. ; Jeong, H.S. ; Kim, Kinam ; Ryu, B.-I.

Author_Institution

Adv. Technol. Dev., Samsung Electron. Co., Ltd., Kyunggi-Do, South Korea

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

907

Lastpage

910

Abstract

Highly manufacturable 64Mbit PRAM has been successfully fabricated using N-doped Ge₂Sb₂Te₅ (GST) and optimal GST etching process. Using those technologies, it was possible to achieve the low writing current of 0.6 mA and clear separation between SET and RESET resistance distributions. The 64Mb PRAM was designed to support commercial NOR flash memory compatible interfaces. Therefore, the fabricated chip was tested under the mobile application platform and its functionality and reliability has been evaluated by operation temperature dependency, disturbance, endurance, and retention. Finally, it was clearly demonstrated that high density PRAM can be fabricated in the product level with strong reliability to produce new nonvolatile memory markets.

Keywords

antimony compounds; etching; flash memories; germanium compounds; semiconductor device manufacture; semiconductor device reliability; semiconductor storage; tellurium compounds; 0.6 mA; GST etching process; Ge₂Sb₂Te₅; N-doped Ge₂Sb₂Te₅; NOR flash memory; PRAM; RESET resistance distribution; SET resistance distribution; chip fabrication; mobile application platform; nonvolatile memory; operation temperature dependency; phase change memory; reliability; Etching; Flash memory; Manufacturing processes; Nonvolatile memory; Phase change memory; Phase change random access memory; Tellurium; Temperature dependence; Testing; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419329

Filename

1419329