• DocumentCode
    3005231
  • Title

    Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO2 interface

  • Author

    Tsai, J.R. ; Ho, L.W. ; Lin, S.H. ; Chang, T.C. ; Shieh, M.D. ; Lin, H.C. ; Lin, J.P. ; Feng, W.S. ; Chang, R.D.

  • Author_Institution
    Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    979
  • Lastpage
    982
  • Abstract
    Experiments of phosphorus dose loss were performed to investigate fundamental kinetics of dopant segregation at the Si/SiO2 interface. A new interface cluster model was proposed in addition to the conventional interface trap model. Simulations successfully fit the transient behavior of phosphorus dose loss over a wide temperature range. Segregation energies were extracted from detrapping/trapping ratios at different temperatures.
  • Keywords
    doping profiles; interface phenomena; phosphorus; segregation; silicon compounds; Si-SiO2:P; detrapping-trapping ratio; dopant segregation modeling; interface cluster model; interface trap model; phosphorus dose loss; segregation energy; silicon interface; transient behavior; Annealing; Furnaces; Implants; Isothermal processes; Kinetic theory; Semiconductor device modeling; Semiconductor process modeling; Silicon; Temperature distribution; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419350
  • Filename
    1419350
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3005231