DocumentCode
3006401
Title
Modulation instability of terahertz pulses in the structures with n-InSb layers
Author
Rapoport, Yu.G. ; Grimalsky, V.V. ; Koshevaya, S.V. ; Castrejon-Martinez, C.
Author_Institution
Phys. Fac., Nat. T. Shevchenko Univ., Kiev, Ukraine
fYear
2015
fDate
21-24 April 2015
Firstpage
124
Lastpage
127
Abstract
The nonlinear interaction of transversely limited terahertz waves with layered structures that include n-InSb layers and dielectric ones is investigated theoretically. The nonlinearity possesses the focusing character both in longitudinal and transverse directions. The modulation instability of long terahertz pulses is investigated that leads to the generation of sequences of short pulses of picosecond durations at the output.
Keywords
III-V semiconductors; indium compounds; narrow band gap semiconductors; terahertz wave spectra; InSb; layered structures; modulation instability; nonlinear terahertz wave interaction; terahertz pulses; transversely limited terahertz waves; Conferences; Dielectrics; Frequency modulation; Graphene; Nanotechnology; Permittivity; focusing nonlinearity; modulation instability; n-InSb; terahertz pulses;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on
Conference_Location
Kiev
Type
conf
DOI
10.1109/ELNANO.2015.7146850
Filename
7146850
Link To Document