• DocumentCode
    3007324
  • Title

    Effect of Fluid Gate on the Electrostatics of ISFET-Based pH Sensors

  • Author

    Go, Jonghyun ; Alam, Muhammad

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2010
  • fDate
    June 28 2010-July 1 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We demonstrate that the role of fluid gate or reference electrode in ISFET system is critical in dictating the operation mode of the ISFET and the local pH at the electrolyte-oxide interface as well.
  • Keywords
    chemical sensors; electrostatics; ion sensitive field effect transistors; pH measurement; ISFET; electrolyte-oxide interface; electrostatics; fluid gate; ion sensitive field effect transistors; pH sensors; reference electrode; Biosensors; Capacitance; Collaboration; Computer interfaces; Electrodes; Electrostatics; FETs; Molecular biophysics; Sensor systems; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nano Symposium (UGIM), 2010 18th Biennial University/Government/Industry
  • Conference_Location
    West Lafayette, IN
  • ISSN
    0749-6877
  • Print_ISBN
    978-1-4244-4731-2
  • Electronic_ISBN
    0749-6877
  • Type

    conf

  • DOI
    10.1109/UGIM.2010.5508912
  • Filename
    5508912
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3007324