DocumentCode
3008830
Title
EKV model extraction for PD SOI MOSFET
Author
Zhu, Xunyu ; Hutchens, Chris
Author_Institution
Oklahoma State Univ., Stillwater, OK, USA
fYear
2004
fDate
38079
Firstpage
81
Lastpage
83
Abstract
EKV model parameters are extracted from the partially depleted (PD) SOI MOSFET fabricated in 0.5 μm Peregrine process. The simulated I-V curves match the measured data very well.
Keywords
MOSFET; inversion layers; semiconductor device models; silicon-on-insulator; EKV model parameters extraction; Peregrine process; first order effects; intrinsic model parameters; inversion regions; partially depleted SOI MOSFET; second order effects; simulated I-V curves; CMOS technology; Circuit testing; Data mining; Equations; MOSFET circuits; Microelectronics; Parameter extraction; Semiconductor device modeling; Virtual colonoscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Region 5 Conference: Annual Technical and Leadership Workshop, 2004
Print_ISBN
0-7803-8217-X
Type
conf
DOI
10.1109/REG5.2004.1300166
Filename
1300166
Link To Document