• DocumentCode
    3011897
  • Title

    Verification measurements in a “Linn” type high-temperature soldering oven

  • Author

    Illés, Balázs ; Jakab, László ; Kömives, József ; Devecser, Eszter ; Szabo, Aron

  • Author_Institution
    Dept. of Electron. Technol., Budapest Univ. of Technol. & Econ., Budapest, Hungary
  • fYear
    2009
  • fDate
    13-17 May 2009
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    In this paper the technology of the ldquoLinnrdquo type high-temperature soldering oven and the verification measuring methods of the oven are discussed. This oven is mainly used for fixing silicon chips on metal substrates by high temperature soldering process. The solder (manly 96Pb/4Sn) is placed between the Si chip and the metal substrate in a foil form before the soldering process. The soldering foil does not contain any flux, therefore reducing agent has to be applied to avoid the oxidation of the joints during the process. In this case the reducing agent is the Forming gas which is a mixture of 10 vol% H2 and 90 vol% N2. Forming gas is used as an atmosphere for processes that need the properties of hydrogen gas without the explosion hazard. The key factors of this soldering process are the suitable temperature (350-370 degC until 13-15 minutes) and the suitable H2 concentration (8-10 vol%) during this. Therefore we have created accurate methods to measure the H2 concentration and the dynamic heating parameters of the oven (time coefficients of the heating and the heating temperatures). The H2 concentration was measured with an ABB EL3020 H2 analyzer and the dynamic heating parameters was calculated from the temperature changes in the oven which were measured with K-type (NiCr-Ni) thermo-couples.
  • Keywords
    electric heating; ovens; soldering; K-type thermo-couples; Linn type high-temperature soldering oven; dynamic heating parameters; forming gas; heating time coefficient; high temperature soldering; metal substrate; reducing agent; silicon chips; solder; temperature 350 degC to 370 degC; time 13 min to 15 min; verification measuring methods; Atmosphere; Explosions; Heating; Hydrogen; Ovens; Oxidation; Semiconductor device measurement; Silicon; Soldering; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on
  • Conference_Location
    Brno
  • Print_ISBN
    978-1-4244-4260-7
  • Type

    conf

  • DOI
    10.1109/ISSE.2009.5207032
  • Filename
    5207032