• DocumentCode
    3012087
  • Title

    A 0.18µm CMOS narrow-band LNA linearization using digital base-band post-distortion

  • Author

    Umoh, Ifiok ; Al-Attar, Talal ; Ogunfunmi, Tokunbo

  • Author_Institution
    Dept. of Electr. Eng., Santa Clara Univ., Santa Clara, CA, USA
  • fYear
    2010
  • fDate
    7-10 Nov. 2010
  • Firstpage
    998
  • Lastpage
    1001
  • Abstract
    In this paper, a novel digital base-band post-distorter is proposed to compensate for nonlinearities in low noise amplifiers. Though high gain, good input matching and low noise (low noise figure) are important factors, linearity and low power combined with these factors is most desirable. The proposed post-distorter achieves these factors by an indirect learning architecture at base-band to compensate for nonlinearities. The low noise amplifier was designed in the standard 0.18 μm CMOS technology. It achieved a 8dB improvement in linearity with respect to the input power.
  • Keywords
    CMOS integrated circuits; distortion; linearisation techniques; low noise amplifiers; CMOS narrow-band LNA linearization; CMOS technology; digital base-band post-distortion; low noise amplifiers; size 0.18 mum; CMOS integrated circuits; Linearity; Mathematical model; Noise; Nonlinear distortion; Polynomials; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Signals, Systems and Computers (ASILOMAR), 2010 Conference Record of the Forty Fourth Asilomar Conference on
  • Conference_Location
    Pacific Grove, CA
  • ISSN
    1058-6393
  • Print_ISBN
    978-1-4244-9722-5
  • Type

    conf

  • DOI
    10.1109/ACSSC.2010.5757550
  • Filename
    5757550