DocumentCode
3013222
Title
Hybrid Silicon Evanescent Photonic Integrated Circuit Technology
Author
Bowers, John E. ; Fang, Alexander W. ; Park, Hyundai ; Jones, Richard ; Cohen, Oded ; Paniccia, Mario J.
Author_Institution
Univ. of California Santa Barbara, Santa Barbara
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
The hybrid silicon evanescent device platform utilizes III -V gain materials bonded to passive silicon waveguides. In this paper, we discuss this device platform, and present hybrid silicon evanescent laser and amplifier device results.
Keywords
elemental semiconductors; integrated optics; silicon; III -V gain materials; passive silicon waveguides; photonic integrated circuit technology; III-V semiconductor materials; Integrated circuit technology; Laser modes; Optical amplifiers; Optical surface waves; Optical waveguides; Photonic integrated circuits; Silicon; Wafer bonding; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453063
Filename
4453063
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