Preparation for SiGe/Si heterogeneous nanostructures via a two-step approach strategy

Author

Zhou, Bi ; Pan, Shuwan ; Chen, Songyan ; Li, Cheng ; Lai, Hongkai ; Yu, Jinzhong ; Zhu, Xianfang

Author_Institution

Dept. of Phys., Xiamen Univ., Xiamen

fYear

2008

fDate

17-19 Sept. 2008

Firstpage

76

Lastpage

78

Abstract

SiGe/Si heterogeneous nanostructures were prepared by electrochemical anodization of SiGe/Si MQWs. Structural and optical properties of the materials were characterized. The origin of the photoluminescence from the heterogeneous nanostructures at room temperature is discussed.

Keywords

Ge-Si alloys; X-ray diffraction; anodisation; electrochemical analysis; elemental semiconductors; nanostructured materials; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor quantum wells; silicon; SiGe-Si; double crystal X-ray diffraction; electrochemical anodization; heterogeneous nanostructures; multiple quantum wells; photoluminescence; scanning electron microscope; temperature 293 K to 298 K; two-step method; Elementary particle vacuum; Germanium silicon alloys; Nanocrystals; Nanostructured materials; Nanostructures; Optical films; Quantum well devices; Scanning electron microscopy; Semiconductor films; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2008 5th IEEE International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1769-8

Electronic_ISBN

978-1-4244-1768-1

Type

conf

DOI

10.1109/GROUP4.2008.4638102

Filename

4638102