Schottky barrier lowering effect in AlGaN/GaN heterostructure SBDs using nano-particles

Author

Min-Seok Kang ; Hyung-Seok Lee ; Jung-Ho Lee ; Sang-Mo Koo

Author_Institution

Dept. of Electronicmaterials Eng., Kwangwoon Univ., Seoul, South Korea

fYear

2013

fDate

5-8 Aug. 2013

Firstpage

1014

Lastpage

1017

Abstract

The correlations between the properties of an AlGaN/GaN device and the Schottky contact structure with and without nanoparticles (NPs) have been investigated. It has been found that the use of NPs effectively lowers the barrier height of the electrical contacts to AlGaN/GaN 2-DEG heterostructures. The Schottky barrier height of the Ni contact with embedded Au-NPs was significantly reduced by ~0.16 eV compared to the reference sample without NPs. The fabricated AlGaN/GaN SBDs with embedded Au-NPs show a turn-on voltage of ~1.7 V and an on-resistance of ~12.5 Ω·mm, respectively.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; aluminium compounds; gallium compounds; gold; nanocomposites; nanocontacts; nanofabrication; nanoparticles; nickel; semiconductor heterojunctions; semiconductor-metal boundaries; two-dimensional electron gas; wide band gap semiconductors; 2DEG heterostructures; AlGaN-GaN heterostructure Schottky barrier diodes; AlGaN-GaN-Au-Ni; Schottky barrier lowering effect; Schottky contact structure; barrier height; electrical contacts; embedded gold nanoparticles; nickel contact; on-resistance; turn-on voltage; Aluminum gallium nitride; Gallium nitride; Gold; Nickel; Schottky barriers; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on

Conference_Location

Beijing

ISSN

1944-9399

Print_ISBN

978-1-4799-0675-8

Type

conf

DOI

10.1109/NANO.2013.6720823

Filename

6720823