Modeling considerations for GaN HEMT devices

The success of simulation-based design of power amplifiers for wireless communications is limited by the accuracy of nonlinear models that are used to represent the transistors. This paper provides some considerations that should be taken into account in measurement-based modeling of GaN transistors. With GaN modeling, particular attention needs to be paid to thermal and trapping issues. The use of pulsed measurements as part of the modeling process is critical to obtaining reliable GaN models. Established models such as EEHEMT, Angelov, and CFET can be successfully used in representing GaN devices.