Degradation modeling of semiconductor devices and electrical circuits

Author

Lagies, A.U. ; Göhler, L. ; Sigg, J. ; Turkes, P. ; Kraus, R.

Author_Institution

Inst. of Electron., Bundeswehr Munich Univ., Germany

fYear

1998

fDate

1998

Firstpage

86

Lastpage

90

Abstract

A mathematical description for the degradation of semiconductor devices and electrical circuits is presented. It is based on the assumption that the reason for degradation is destruction of the internal structures, caused by the input of energy. The formulation is tested with the simulation of an IGBT module. Additionally, a method is presented to shorten the simulation time as much as possible

Keywords

circuit reliability; failure analysis; insulated gate bipolar transistors; integrated circuit modelling; modules; semiconductor device models; semiconductor device reliability; IGBT module; degradation modeling; electrical circuit degradation; electrical circuits; energy input; internal structure destruction; mathematical description; semiconductor device degradation; semiconductor devices; simulation; simulation time; Circuit simulation; Failure analysis; Insulated gate bipolar transistors; Lead; Packaging; Semiconductor devices; Semiconductor materials; Temperature dependence; Thermal degradation; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on

Conference_Location

Bangi

Print_ISBN

0-7803-4971-7

Type

conf

DOI

10.1109/SMELEC.1998.781155

Filename

781155