DocumentCode
3015447
Title
Doping fluctuation induced performance variation in SiNW biosensors
Author
Xinrong Yang ; Pengyuan Zang ; Frensley, William ; Dian Zhou ; Hu, Wenfeng
Author_Institution
Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA
fYear
2013
fDate
5-8 Aug. 2013
Firstpage
285
Lastpage
288
Abstract
We analyze the doping fluctuation induced stochastic performance variation in charge based Si nanowire (SiNW) biosensors. We show that for given doping statistics and system topology configuration, electrostatic biasing condition can be tuned to optimize overall sensor sensitivity. Systems that utilize NW arrays may achieve optimal sensitivity at different biasing condition than that for individual NW sensors.
Keywords
biosensors; chemical sensors; doping; electrostatics; nanobiotechnology; nanosensors; nanowires; silicon; statistical analysis; stochastic processes; Si; charge based silicon nanowire biosensors; doping fluctuation analysis; doping statistics; electrostatic biasing condition; optimization; stochastic performance variation; system topology configuration; Biosensors; Doping; Fluctuations; Ionization; Nanobioscience; Sensitivity; Silicon; Biosensor; Doping fluctuation; Nanowire;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location
Beijing
ISSN
1944-9399
Print_ISBN
978-1-4799-0675-8
Type
conf
DOI
10.1109/NANO.2013.6720854
Filename
6720854
Link To Document