High efficiency monolithic GaAs/Si tandem solar cells grown by MOCVD

Author

Yang, Ming-Ju ; Soga, Tetsuo ; Jimbo, Takashi ; Umeno, Masayoshi

Author_Institution

Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1847

Abstract

A monolithic high-efficiency GaAs/Si cascade solar cell fabricated by MOCVD is demonstrated. It consists of the GaAs top cell and the Si bottom cell. Using a buffer layer of Al_0.3Ga_0.7As, the conversion efficiency of the GaAs top cell is decreased from 15.1% from 14.2%, but it makes the efficiency of the Si bottom cell increased from 4.3% to 5.3%. The theoretical analyses of the Si bottom cell are carried out. The suitable resistivity of p-Si substrate for the Si bottom cell is founded to be 10 Ω·cm, which corresponded with the experimental results. The total conversion efficiency of the GaAs/Si tandem solar cell is 19.5% (1 sun, AM0) which has been achieved in a three-terminal configuration

Keywords

CVD coatings; III-V semiconductors; chemical vapour deposition; elemental semiconductors; gallium arsenide; semiconductor device models; semiconductor device testing; silicon; solar cells; 10 ohmcm; 14.2 percent; 15.1 percent; 19.5 percent; 4.3 percent; 5.3 percent; Al_0.3Ga_0.7As; GaAs-Si; MOCVD growth; buffer layer; conversion efficiency; monolithic GaAs/Si tandem solar cells; semiconductor; theoretical analyses; three-terminal configuration; Buffer layers; Conductivity; Gallium arsenide; Gold; MOCVD; Photovoltaic cells; Photovoltaic systems; Solar power generation; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520725

Filename

520725