DocumentCode
3015794
Title
Effect of gas switching on InP/InGaAs interfaces during CBE growth
Author
Thomas, S. ; Kuo, H.C. ; Curtis, A.P. ; Wu, W. ; Tucker, J.R. ; Stillman, G.E.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fYear
1997
fDate
11-15 May 1997
Firstpage
312
Lastpage
315
Abstract
In this paper, the effect of a simple gas switching sequence on interface abruptness during CBE growth is studied using double crystal X-ray diffraction (DCXRD), photoluminescence (PL), and scanning tunneling microscopy (STM). Optimization of the switching sequence produces monolayer abruptness for both the InP/InGaAs and the InGaAs/InP interfaces
Keywords
III-V semiconductors; X-ray diffraction; chemical beam epitaxial growth; gallium arsenide; indium compounds; interface structure; photoluminescence; scanning tunnelling microscopy; semiconductor epitaxial layers; semiconductor growth; CBE growth; InP-InGaAs; double crystal X-ray diffraction; gas switching; interface abruptness; photoluminescence; scanning tunneling microscopy; Degradation; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical devices; Optical pumping; Optical scattering; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location
Cape Cod, MA
ISSN
1092-8669
Print_ISBN
0-7803-3898-7
Type
conf
DOI
10.1109/ICIPRM.1997.600140
Filename
600140
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