Degradation of crystalline quality due to interfacial strain in short period lattice-matched GaInAs/InP superlattices

Author

Gerling, M. ; Ritter, D. ; Hamm, R.A. ; Chu, S.N.G.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

fYear

1997

fDate

11-15 May 1997

Firstpage

316

Lastpage

319

Abstract

Superlattices of Ga_0.47In_0.53As/InP were grown by metalorganic molecular beam epitaxy. Abrupt interfaces were obtained when the total superlattice period was larger than about 85 Å. When the total period was less than 85 Å the onset of three-dimensional growth was observed. Since no group III atom intermixing was detected in our samples we attribute this effect to the intrinsic interface strain

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; semiconductor growth; semiconductor superlattices; Ga_0.47In_0.53As-InP; crystalline quality; interface abruptness; interfacial strain; intermixing; metalorganic molecular beam epitaxy; short period lattice-matched superlattice; three-dimensional growth; Atomic layer deposition; Capacitive sensors; Crystallization; Degradation; Indium phosphide; Laser sintering; Metallic superlattices; Molecular beam epitaxial growth; X-ray diffraction; X-ray imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600141

Filename

600141