Efficient inductance extraction via windowing

We propose a new, efficient and accurate localized inductance modeling technique via windowing in a manner that is analogous to localized capacitance extraction. The stability and accuracy of this process is made possible by twice inverting the localized inductance models, and in the process exploiting properties of the magnetostatic interactions as modeled via the susceptance (inverse inductance). Application of these localized double-inverse inductance models to actual IC bus examples demonstrates the significant improvement in simulation efficiency and overall accuracy as compared to alternative methods of approximation and simplification