DocumentCode
3017054
Title
Monolithic Integration of Semiconductor Optical Amplifier and Photodiode through Quantum Well Intermixing
Author
Tang, Jiansheng ; Yang, Shujun ; Bhatranand, Apichai
Author_Institution
Hunan First Normal Coll., Changsha
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
Monolithic integration of semiconductor optical preamplifier and photodiode is demonstrated through a two-stage laser-induced quantum well intermixing process. The integrated device has a peak responsivity of 5.7 A/W and a 3-dB bandwidth of 14.7 GHz.
Keywords
integrated optoelectronics; photodiodes; semiconductor optical amplifiers; semiconductor quantum wells; bandwidth; bandwidth 14.7 GHz; monolithic integration; peak responsivity; photodiode; semiconductor optical preamplifier; two-stage laser-induced quantum well intermixing; High speed optical techniques; Integrated optics; Monolithic integrated circuits; Optical receivers; Optical sensors; Optical waveguides; PIN photodiodes; Preamplifiers; Semiconductor optical amplifiers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453270
Filename
4453270
Link To Document