Monte Carlo simulation of high-energy electron beam lithography process

The complex scattering process of the high-energy electron beams in resist is simulated by Monte Carlo method. The energy deposition distributions are presented under different exposure conditions. The three-dimensional (3-D) development profiles are obtained with the developing threshold model. It is found that, in the high energy range, higher electron beam energy, thinner resist, appropriate dose and lower substrate´s atom number will cause lower proximity effect. Based on the simulations, we can explain the proximity effect and the dose control on proximity effect correction via the three-dimensional development profiles. The results will be useful to optimize the exposure conditions in electron beam lithography, and to provide more accurate data for proximity effect correction.