Piezoelectrically actuated micromechanical BAW resonators

Author

Rosenberg, Piia ; Jaakkola, Antti ; Dekker, James ; Nurmela, Arto ; Pensala, Tuomas ; Asmala, Samuli ; Riekkinen, Tommi ; Mattila, Tomi ; Alastalo, Ari

Author_Institution

VTT Tech. Res. Centre of Finland, Espoo

fYear

2008

fDate

2-5 Nov. 2008

Firstpage

2181

Lastpage

2184

Abstract

We report on piezoelectrically actuated 13 MHz silicon beam resonators operating in the fundamental length extensional BAW mode. The resonance is evoked using an aluminum nitride layer grown on top of the resonator. We demonstrate quality factors as high as Q~55000 in vacuum, and transduction factors of the order of eta~20 muN=V. The anchor loss is studied using designs with variations in the support beam width and in the resonator orientation (crystalline direction).

Keywords

III-V semiconductors; Q-factor; acoustic resonators; aluminium compounds; bulk acoustic wave devices; crystal resonators; elemental semiconductors; micromechanical resonators; piezoelectric actuators; piezoelectric transducers; semiconductor growth; silicon; wide band gap semiconductors; AlN-Si; aluminium nitride layer; anchor loss; crystalline direction; frequency 13 MHz; micromechanical BAW resonator design; piezoelectrically actuated resonator; quality factor; silicon beam resonator; transduction factor; Acoustic beams; Aluminum nitride; Costs; Crystallization; Damping; Micromechanical devices; Q factor; Resonance; Silicon; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2008. IUS 2008. IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4244-2428-3

Electronic_ISBN

978-1-4244-2480-1

Type

conf

DOI

10.1109/ULTSYM.2008.0540

Filename

4803285