DocumentCode
3019655
Title
Temperature Dependence of Ultrafast Laser Ablation Efficiency of Crystalline Silicon
Author
Yahng, J.S. ; Jeoung, S.C.
Author_Institution
Korea Res. Inst. of Stand. & Sci., Daejeon
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
Ultrafast laser ablation of crystalline silicon was investigated as a function of temperature. The ablation efficiency is slightly enhanced with an apparent decrease in ablation threshold and surface roughness at a high substrate temperature.
Keywords
elemental semiconductors; high-speed optical techniques; laser ablation; silicon; surface roughness; Si; crystalline silicon; substrate temperature; surface roughness; ultrafast laser ablation efficiency; Crystallization; Laser ablation; Optical surface waves; Pulsed laser deposition; Rough surfaces; Silicon; Surface emitting lasers; Surface morphology; Temperature dependence; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453395
Filename
4453395
Link To Document