DocumentCode
301990
Title
High speed IDDQ current sensors for VLSI system testing
Author
Ramirez-Angulo, J. ; Gonzalez-Altamirano, G.
Author_Institution
Klipch Sch. of Electr. & Comput. Eng., New Mexico State Univ., Las Cruces, NM, USA
Volume
1
fYear
1996
fDate
12-15 May 1996
Firstpage
389
Abstract
A scheme for measuring IDDQ is presented. It is based on a current sensor which consists of a large W/L MOS transistor in parallel with a small W/L transistor. For IDDQ measurement the large transistor is turned off leaving only the small W/L transistor in the IDDQ´s current path. The potential of the proposed scheme for high resolution, high speed (>1 MHz) IDDQ measurements is discussed with the aid of transistor level computer simulations
Keywords
VLSI; electric current measurement; electric sensing devices; integrated circuit testing; 1 MHz; IDDQ current sensor; MOS transistor; VLSI system testing; computer simulation; high resolution high speed measurement; Circuit faults; Circuit testing; Clocks; Current measurement; Current supplies; Delay; MOSFETs; Sensor systems; System testing; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
Conference_Location
Atlanta, GA
Print_ISBN
0-7803-3073-0
Type
conf
DOI
10.1109/ISCAS.1996.539966
Filename
539966
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