DocumentCode
302025
Title
A new DC model for five-terminals bipolar devices used in smart-power ICs
Author
Speciale, N. ; Onofri, G. ; Graffi, S. ; Masetti, G. ; Palara, S. ; Privitera, Giuseppe
Author_Institution
Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
Volume
1
fYear
1996
fDate
12-15 May 1996
Firstpage
629
Abstract
A new DC model for five-terminals bipolar devices used in advanced smart-power applications is presented. The model accounts for all parasitic effects associated with four-junction structures, enables an easy procedure for parameters extraction and favourably compares with experimental data on both simple devices and complex ICs
Keywords
bipolar transistors; equivalent circuits; integrated circuit modelling; power integrated circuits; semiconductor device models; DC model; five-terminal bipolar devices; four-junction structures; parameters extraction; parasitic effects; smart-power ICs; Costs; Current density; Data mining; Flexible printed circuits; Integrated circuit packaging; Logic circuits; Logic devices; Microelectronics; Power integrated circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
Conference_Location
Atlanta, GA
Print_ISBN
0-7803-3073-0
Type
conf
DOI
10.1109/ISCAS.1996.540026
Filename
540026
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